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Si4390DY
Vishay Siliconix
N-Channel Q g , Fast Switching MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
30
R DS(on) ( ? )
0.0095 at V GS = 10 V
0.0135 at V GS = 4.5 V
I D (A)
12.5
10.5
? Halogen-free According to IEC 61249-2-21
Definition
? Extremely Low Q gd for Switching Losses
? TrenchFET ? Power MOSFET
? 100 % R g Tested
? Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
? High-Side DC/DC Conversion
- Notebook
SO-8
- Server
S
S
S
G
1
2
3
4
8
7
6
5
D
D
D
D
G
D
Top View
S
Ordering Information: Si4390DY-T1-E3 (Lead (Pb)-free)
Si4390DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (T A = 25 °C, unless otherwise noted)
N-Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
10 s
Steady State
30
± 20
Unit
V
Continuous Drain Current (T J = 150 °C) a
Pulsed Drain Current
T A = 25 °C
T A = 70 °C
I D
I DM
12.5
10
20
8.5
6.8
A
Continuous Source Current (Diode Conduction) a
I S
2.7
1.3
Maximum Power
Dissipation a
T A = 25 °C
T A = 70 °C
P D
3.0
1.9
1.4
0.9
W
Operating Junction and Storage Temperature Range
T J , T stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient a
Maximum Junction-to-Foot (Drain)
t ? 10 s
Steady State
Steady State
R thJA
R thJF
32
68
15
42
90
20
°C/W
Notes:
a. Surface mounted on 1" x 1" FR4 board.
Document Number: 72150
S11-0209-Rev. F, 14-Feb-11
www.vishay.com
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